Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters
نویسندگان
چکیده
G. G. Scapellato,1 S. Boninelli,1 E. Napolitani,2 E. Bruno,1 A. J. Smith,3 S. Mirabella,1 M. Mastromatteo,2 D. De Salvador,2 R. Gwilliam,3 C. Spinella,4 A. Carnera,2 and F. Priolo1 1MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania, Italy 2MATIS IMM-CNR and Dipartimento di Fisica, Università di Padova, via Marzolo 8, 35131 Padova, Italy 3Ion Beam Centre, The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom 4IMM-CNR, Ottava strada 5, 95121 Catania, Italy (Received 1 June 2011; published 5 July 2011)
منابع مشابه
Synthesis of Germanium Dioxide Microclusters on Silicon Substrate in Non-Aqueous Solution by Electrochemical Deposition
We report the formation of crystalline germanium dioxide (GeO2) microclusters on n-Si (100) electrodeposited in non-aqueous electrolyte (a mixture of 5 vol.% germanium tetrachloride (GeCl4) and dipropylene glycol (C6H14O3) ) at current density of 20 mA/cm 2 for 200 sec. Pt, C and Ge are used as an anode while Si acts as a cathode. Fieldemission scanning electron microscopy (FESEM) images show t...
متن کاملReduced GeO2 Nanoparticles: Electronic Structure of a Nominal GeOx Complex and Its Stability under H2 Annealing
A nominal GeOx (x ≤ 2) compound contains mixtures of Ge, Ge suboxides, and GeO2, but the detailed composition and crystallinity could vary from material to material. In this study, we synthesize GeOx nanoparticles by chemical reduction of GeO2, and comparatively investigate the freshly prepared sample and the sample exposed to ambient conditions. Although both compounds are nominally GeOx, they...
متن کاملX-ray absorption spectroscopy of GeO2 glass to 64 GPa.
The structural behavior of GeO2 glass has been investigated up to 64 GPa using results from x-ray absorption spectroscopy in a diamond anvil cell combined with previously reported density measurements. The difference between the nearest Ge-O distances of glassy and rutile-type GeO2 disappears at the Ge-O distance maximum at 20 GPa, indicating completion of the tetrahedral-octahedral transition ...
متن کاملLaser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si
Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we present a model for the microscopic origin of the radiative transitions leading to enhanced photoluminescence (PL) from such GIB-QDs. We provide an energy level scheme for GIB-QDs in a crystalline Si matrix that is based ...
متن کاملIon-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...
متن کامل